OSE Seminar with Dr. rer. nat. Holger Eisele on Scanning Tunneling Microscopy and Spectroscopy for Semiconductor Analysis
Posted: January 15, 2019
Date: Thursday, January 17, 2019
Time: 11:00 AM to Noon
Location: CHTM, Room 101
Map to CHTM:
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Prof. Dr. rer. nat. Holger Eisele
Technische Universität Berlin
Department for Mathematics and Science
Institute of Solid State Physics
In order to develop devices based on modern semiconductor nanostructures due to quantum mechanics it is useful to know their geometric and electronic details. With cross-sectional scanning tunneling microscopy (XSTM) and spectroscopy (STS) we have a tool to perform such analysis with atomic resolution.
I will present a couple of examples on InAs(:Sb)/GaAs sub-monolayer quantum dots, GaN and InN layers, as well as β-Ga2O3 and In2O3 bulk materials to show the abilities of XSTM and STS: From InAs:Sb/GaAs sub-monolayer quantum dots we could determine the influence of additional Sb on the growth with atomic resolution, how these quantum dots form during growth and where the Sb is located in resecpt to the In. For GaN and InN we could determine a couple of properties for the non-polar surfaces, especially a hidden surface state for GaN and the absence of electron accumulation for InN. β-Ga2O3 and In2O3 are quite novel materials, for which we try to understand the self-doping by oxygen vacancies.