OSE Special Seminar by Prof. Piotr Perlin on Next generation of InGaN lasers – in search of new functionality and better integration
Departmental News
Posted: February 7, 2020
Date: Tuesday, February 11, 2020
Time: 11:30 AM to 12:30 PM
Location: CHTM, Room 101
Map to CHTM:
http://www.chtm.unm.edu/about/map-directions.html
ADA Accommodations are available.
Speaker:
Prof. Piotr Perlin
Institute of High Pressure Physics, “Unipress”, Warsaw, Poland
Abstract:
Nitride semiconductor laser diodes have found their place in many optoelectronic technologies, including lighting techniques, image projection, and optical data storage. With the growing maturity of existing technologies, the time has come to develop devices that go beyond the standard Fabry-Perot laser diodes. During this presentation I will briefly discuss the development of superluminescent diodes and semiconductor optical amplifiers and distributed feedback (DFB) lasers operating in the visible spectral range. The last two devices are necessary for applications such as optical atomic clocks, but they can also be the basis for future integrated photonic integrated systems (PICs) and visible telecommunication including Li-Fi. I will also discuss the concept of high power two-dimensional laser arrays, which can be the key concept for image projection systems and power systems such as non-ferrous metal welders.
Biography:
Piotr Perlin graduated from the Department of Physics, University of Warsaw in 1984. Since 1985 he has been employed as a research associate in the Center for High Pressure Research of Polish Academy of Sciences. His early work focuses on phonons and structural phase transitions in gallium nitride, he cooperated closely with CNRS French groups in Paris and Montpellier. In 1993 he received PhD degree from Institute of Physics, Polish Academy of Sciences presenting the dissertation about: “Physical properties of GaN and AlN under high hydrostatic pressure". 1995-1997, has been employed by University of New Mexico USA as senior research engineer, studying the physics of GaN-based optoelectronic devices.1997-1998, has been employed by University of California at Berkeley, studying the influence of internal electric fields on the properties of nitride based quantum structures. Since 1999 works in Center for High Pressure Research in Warsaw holding the position of an assistant professor and focusing his work on the development of blue laser diode based on gallium nitride. 2002 he receives his habilitation from Institute of Physics Polish Academy of Sciences. Since 2003 associate professor in Center for High Pressure Research of Polish Academy of Sciences. 2010 he is awarded a title of full professor of physics in the Institute of High Pressure Physics from 2001 until present holds a position of CTO at TopGaN Ltd, a company focusing on nitride lasers diodes. Over 350 papers in the international scientific journal, Hirsch index 38. Current scientific interest: nitride based laser diodes, laser diode arrays, superluminescent diodes, physics carrier recombination in nitride quantum structures.
