Joint OSE and ECE Departmental Seminar By Dr. Daniel Feezell on Modulation Response and Carrier Dynamics in III-Nitride Optoelectronics

Departmental News

Alhassan Ahmed  Wins

Posted: October 20, 2021

Date: Friday, October 22, 2021 

Time:  at 3 PM 

Location:  Woodward Hall, Room 147


III-nitride high-speed optoelectronics are emerging for a variety of applications, including visible-light communication (VLC) in light-fidelity (Li-Fi) networks, optical communication using photonic-integrated circuits, and micro-pixel LED displays. III-nitride materials offer efficient light emission and the potential to route, modulate, and detect light on a single chip. Previous research into III-nitride optoelectronics has mainly focused on developing emitters with high efficiencies and large optical output powers, which are needed for conventional lighting and data storage applications. Here, we present the more recent development of III-nitride high-speed emitters, including planar micro-LEDs, nanowire-based micro-LEDs, and superluminescent diodes. We demonstrate record-high modulation bandwidths for III-nitride LEDs and superluminescent diodes by growing devices on nonpolar and semipolar orientations of GaN, which are free from the polarization-related effects that limit the modulation bandwidths of c-plane III-nitrides. We also combine a rate equation model with an RF measurement technique to extract the carrier dynamics in the devices, offering insight into the underlying causes of efficiency droop, thermal droop, and the green gap.


Dr. Daniel Feezell is an Associate Professor and Regents’ Lecturer in the Electrical and Computer Engineering Department and the Center for High Technology Materials at the University of New Mexico. He received the Ph.D. degree in 2005 from the University of California Santa Barbara (UCSB) and was previously a Project Scientist in the Solid-State Lighting and Energy Center at UCSB and worked for Soraa. He is an expert in epitaxial growth and fabrication of group-III nitrides, high-efficiency, and high-speed LEDs; nanoscale selective-area epitaxy, vertical-cavity surface-emitting lasers, and wide-bandgap power electronics. He has authored or co-authored over 150 journal and conference publications and holds more than 20 U.S. patents. Dr. Feezell received an NSF CAREER award in 2015 and a DARPA Young Faculty Award in 2013. Dr.Feezell’s projects have been funded by DOE, DOD, DARPA, ARPA-E, NSF, DTRA, and the commercial sector. He is a Senior Member of IEEE.