Semiconductor quantum dots (QDs), also referred to as artificial atoms, offer unique properties such as discrete and size-controlled energy levels. They have recently emerged as a pivotal platform for various optoelectronic applications. Specifically, epitaxial III-V QDs serve as the active component of choice in solid-state infrared emitters such as lasers and single/entangled photon sources. QD-based emitters have demonstrated exceptional performance with state-of-the-art device parameters and enhanced radiation hardness. A critical step towards realizing these emitters is high-quality epitaxial growth, with separate optimization strategies required for different device classes. This presentation will focus on our recent work in developing epitaxial strategies for realizing QD-based emitters, specifically lasers and single/entangled photon sources.

Acknowledgements: This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE) Office of Science by Los Alamos National Laboratory (Contract 89233218CNA000001) and Sandia National Laboratories (Contract DE-NA-0003525).

Sadhvikas Addamane is a Senior Member of Technical Staff at Sandia National Laboratories (SNL) and a Staff Scientist at the Center for Integrated Nanotechnologies (CINT). He received his BS and PhD in electrical engineering from the University of New Mexico (UNM) in 2013 and 2017, respectively. He also held postdoctoral appointments at both UNM and SNL. His research focuses on the development of epitaxial growth strategies for a wide variety of optoelectronic devices including high mobility 2DEGs, lasers, saturable absorbers, detectors, and single/entangled photon emitters.