ProfileVisible optoelectronics Novell fabrication techniques
GaN-based epitaxy, solid state lighting, semiconductor lasers
BioPrior to joining UNM, Daniel Feezell was a Project Scientist in the Solid-State Lighting and Energy Center at the University of California Santa Barbara (UCSB) from 2010-2012. Working in the research group of Prof. Shuji Nakamura, he directed projects on nonpolar and semipolar light-emitting diodes (LEDs) and laser diodes. A significant accomplishment during this period includes the first demonstration of a nonpolar GaN-based vertical-cavity surface-emitting laser. From 2008-2010, Dr. Feezell was a Senior Device Scientist and the first employee at Kaai/Soraa, Inc., where he developed high-performance GaN-based laser diodes and LEDs. Dr. Feezell received the Ph.D. degree in 2005 under the direction of Prof. Larry Coldren at the University of California Santa Barbara. He developed monolithic 1.31 – 1.55 µm InP- based vertical-cavity surface-emitting lasers with novel optical apertures, leading to differential efficiencies above 60%. From 2005-2008, Dr. Feezell held a postdoctoral position at UCSB developing nonpolar GaN-based laser diodes. For his role in the achievement of the first nonpolar GaN-based edge-emitting laser diodes he received the 30th Annual Japanese Journal of Applied Physics Paper Award. He is the author or co-author of more than 50 peer-reviewed conference and journal publications, and has received several patents. Research Interests: Epitaxial growth, fabrication, and characterization of group III-nitride materials and devices, including nonpolar/semipolar orientations. Solid-state lighting and high-efficiency LEDs. Visible edge-emitting and vertical-cavity surface-emitting lasers. Applications of group III-nitrides to energy efficiency and renewable energy.